Skip to main content
Back

EVS-EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

General information

Valid from 05.08.2015
Base Documents
IEC 62047-16:2015; EN 62047-16:2015
Directives or regulations
None

Standard history

Status
Date
Type
Name
05.08.2015
Main
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate

Required fields are indicated with *

*
*
*
PDF
12.20 € incl tax
Paper
12.20 € incl tax
Browse standard from 2.44 € incl tax
Standard monitoring

Customers who bought this item also bought

Main

EVS-EN 62047-17:2015

Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films
Newest version Valid from 05.08.2015
Main

EVS-EN 62047-11:2013

Semiconductor devices - Micro-electromechanical devices -- Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
Newest version Valid from 14.11.2013
Main

EVS-EN 62047-18:2013

Semiconductor devices - Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
Newest version Valid from 14.11.2013
Main

EVS-EN 62047-19:2013

Semiconductor devices - Micro-electromechanical devices -- Part 19: Electronic compasses
Newest version Valid from 14.11.2013