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IEC 63275-1:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

General information

Valid from 21.04.2022
ICS Groups
31.080.30 Transistors
Directives or regulations
None

Standard history

Status
Date
Type
Name
21.04.2022
Main
IEC 63275-1:2022
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

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PDF
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Paper
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Standard monitoring
English (PDF 741 KB)

Related products

Amendment

IEC 60747-8:2010/AMD1:2021

Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Newest version Valid from 25.06.2021
Main

IEC 60747-8:2010+AMD1:2021 CSV

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Newest version Valid from 25.06.2021
Main

IEC 60747-7:2010+AMD1:2019 CSV

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
Newest version Valid from 23.09.2019
Main

IEC 63275-2:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
Newest version Valid from 11.05.2022

Standards designation

EVS Estonian standard
EN European standard (published by an CEN or CENELEC)
EN ISO International standard adopted as an European standard
ISO International Organization for Standardization’s standard
IEC International Electrotechnical Commission’s standard
HD CENELEC’s harmonisation document
   
EVS-EN European standard implemented in Estonia
EVS-EN ISO International standard adopted in Europe and implemented in Estonia
EVS-EN ISO/IEC International standard/International electrotechnical standard adopted in Europe and implemented in Estonia
EVS-IEC International electrotechnical standard implemented in Estonia
EVS-ISO International standard implemented in Estonia
   
A, AMD amedment
+A a full standard plus the amendment
/A only amendment
COR, AC corrigendum
+COR a full standard plus the corrigendum
NA national annex
+NA a full standard plus the national annex
/NA only national annex
TS technical specification
TR technical report
CWA agreement, developed by a CEN or CENELEC
prEVS-EN (etc) draft standard
   
et the standard is in Estonian only
en the standard is in English only
et-en the standard is in Parallel text Estonian-English