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EVS-EN 60749-23:2004/A1:2011

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

General information

Valid from 05.04.2011
Base Documents
IEC 60749-23:2004/A1:2011; EN 60749-23:2004/A1:2011
ICS Groups
31.080.01 Semiconductor devices in general
Directives or regulations
None

Standard history

Status
Date
Type
Name
Main
prEN IEC 60749-23:2024
05.04.2011
Amendment
EVS-EN 60749-23:2004/A1:2011
09.07.2004
Main
EVS-EN 60749-23:2004
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.

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Standards designation

EVS Estonian standard
EN European standard (published by an CEN or CENELEC)
EN ISO International standard adopted as an European standard
ISO International Organization for Standardization’s standard
IEC International Electrotechnical Commission’s standard
HD CENELEC’s harmonisation document
   
EVS-EN European standard implemented in Estonia
EVS-EN ISO International standard adopted in Europe and implemented in Estonia
EVS-EN ISO/IEC International standard/International electrotechnical standard adopted in Europe and implemented in Estonia
EVS-IEC International electrotechnical standard implemented in Estonia
EVS-ISO International standard implemented in Estonia
   
A, AMD amedment
+A a full standard plus the amendment
/A only amendment
COR, AC corrigendum
+COR a full standard plus the corrigendum
NA national annex
+NA a full standard plus the national annex
/NA only national annex
TS technical specification
TR technical report
CWA agreement, developed by a CEN or CENELEC
prEVS-EN (etc) draft standard
   
et the standard is in Estonian only
en the standard is in English only
et-en the standard is in Parallel text Estonian-English